SSM6J422TU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J422TU,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.8 nC
Input Capacitance (Ciss) (Max) @ Vds	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	42.7 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Operating Temperature	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM6J422TU,LF	Surface Mount	1 V	20 V	42.7 mOhm	6-SMD Flat Leads	4 A	P-Channel	1.5 V 4.5 V	840 pF	12.8 nC	MOSFET (Metal Oxide)	6 V	-8 V	UF6	150 °C	1 W

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General part information

P-Channel 20 V 4A (Ta) 1W (Ta) Surface Mount UF6

Technical documentation and resources