MOSFET P-CH 20V 4A UF6
| Part | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) [Max] | Vgs (Max) [Min] | Supplier Device Package | Operating Temperature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 1 V | 20 V | 42.7 mOhm | 6-SMD Flat Leads | 4 A | P-Channel | 1.5 V 4.5 V | 840 pF | 12.8 nC | MOSFET (Metal Oxide) | 6 V | -8 V | UF6 | 150 °C | 1 W |