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DMN3060LCA3-7 - Package Image for X4-DSN1006-3

DMN3060LCA3-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

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DMN3060LCA3-7 - Package Image for X4-DSN1006-3

DMN3060LCA3-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3060LCA3-7
Current - Continuous Drain (Id) @ 25°C3.9 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.677 nC
Input Capacitance (Ciss) (Max) @ Vds192 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)790 mW
Rds On (Max) @ Id, Vgs60 mOhm
Supplier Device PackageX4-DSN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.52
10$ 0.32
100$ 0.20
500$ 0.15
1000$ 0.14
2000$ 0.12
5000$ 0.11
Digi-Reel® 1$ 0.52
10$ 0.32
100$ 0.20
500$ 0.15
1000$ 0.14
2000$ 0.12
5000$ 0.11
Tape & Reel (TR) 10000$ 0.09
30000$ 0.09
50000$ 0.08

Description

General part information

DMN3060LCA3 Series

This new generation MOSFET is designed to minimize the footprint in handheld and Mobile application. It can be used to replace many small signals MOSFET with as really small footprint.