DMN3060LCA3 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Diodes Inc DMN3060LCA3-7	MOSFET (Metal Oxide)	12 V	1.677 nC	N-Channel	790 mW	30 V	1.8 V 8 V	3.9 A	X4-DSN1006-3	3-XFDFN	1.1 V	-55 °C	150 °C	Surface Mount	192 pF	60 mOhm

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low Qg & Qgd

• Small Footprint

• Low Profile 0.20mm Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

Description

This new generation MOSFET is designed to minimize the footprint in handheld and Mobile application. It can be used to replace many small signals MOSFET with as really small footprint.