Specification	RN4988(TE85L,F)

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	80
Frequency - Transition (Options)	200MHz, 250MHz
Mounting Type	Surface Mount
NPN Count	1
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	US6
PNP Count	1
Power - Max	200 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Configuration	Pre-Biased, Dual
Transistor Type	NPN, PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN4988 Series

Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)

Part	PNP Count	Transistor Configuration	Transistor Type	NPN Count	Current - Collector (Ic) (Max)	Package Name	Resistor - Base (R1) Resistance	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max)	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max	Package / Case	DC Current Gain (hFE) (Min)	Vce Saturation (Max)	Frequency - Transition (Options)
Toshiba Semiconductor and Storage RN4988(TE85L,F)	1	Dual Pre-Biased	NPN PNP	1	0.1 mA	US6	22 kOhm	47 kOhm	500 nA	Surface Mount	50 V	200 mW	6-TSSOP SC-88 SOT-363	80	300 mV	200MHz 250MHz
Toshiba Semiconductor and Storage RN4988,LXHF(CT	1	Dual Pre-Biased	NPN PNP	1	0.1 mA	US6	22 kOhm	47 kOhm	500 nA	Surface Mount	50 V	200 mW	6-TSSOP SC-88 SOT-363	80	300 mV	200MHz 250MHz
Toshiba Semiconductor and Storage RN4988FE,LF(CT	1	Dual Pre-Biased	NPN PNP	1	0.1 mA	ES6	22 kOhm	47 kOhm	500 nA	Surface Mount	50 V	100 mW	SOT-563 SOT-666	80	300 mV	200MHz 250MHz
Toshiba Semiconductor and Storage RN4988(T5L,F,T)	1	Dual Pre-Biased	NPN PNP	1	0.1 mA	US6	22 kOhm	47 kOhm	100 µA	Surface Mount	50 V	200 mW	6-TSSOP SC-88 SOT-363	80	300 mV	200MHz 250MHz

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