Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)
Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)
Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)
| Part | PNP Count | Transistor Configuration | Transistor Type | NPN Count | Current - Collector (Ic) (Max) | Package Name | Resistor - Base (R1) Resistance | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) | Mounting Type | Voltage - Collector Emitter Breakdown (Max) | Power - Max | Package / Case | DC Current Gain (hFE) (Min) | Vce Saturation (Max) | Frequency - Transition (Options) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 | Dual Pre-Biased | NPN PNP | 1 | 0.1 mA | US6 | 22 kOhm | 47 kOhm | 500 nA | Surface Mount | 50 V | 200 mW | 6-TSSOP SC-88 SOT-363 | 80 | 300 mV | 200MHz 250MHz |
Toshiba Semiconductor and Storage | 1 | Dual Pre-Biased | NPN PNP | 1 | 0.1 mA | US6 | 22 kOhm | 47 kOhm | 500 nA | Surface Mount | 50 V | 200 mW | 6-TSSOP SC-88 SOT-363 | 80 | 300 mV | 200MHz 250MHz |
 Toshiba Semiconductor and Storage | 1 | Dual Pre-Biased | NPN PNP | 1 | 0.1 mA | ES6 | 22 kOhm | 47 kOhm | 500 nA | Surface Mount | 50 V | 100 mW | SOT-563 SOT-666 | 80 | 300 mV | 200MHz 250MHz |
Toshiba Semiconductor and Storage | 1 | Dual Pre-Biased | NPN PNP | 1 | 0.1 mA | US6 | 22 kOhm | 47 kOhm | 100 µA | Surface Mount | 50 V | 200 mW | 6-TSSOP SC-88 SOT-363 | 80 | 300 mV | 200MHz 250MHz |