STU11N65M2

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STMicroelectronics

POWER MOSFET, N CHANNEL, 7 A, 650 V, 0.6 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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DocumentsDatasheet Technical Data Sheet EN +1

STU11N65M2

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 7 A, 650 V, 0.6 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU11N65M2

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	670 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STU11 Series

POWER MOSFET, N CHANNEL, 7 A, 650 V, 0.6 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Part	Vgs(th) (Max) @ Id	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
STMicroelectronics STU11N65M2	4 V	MOSFET (Metal Oxide)	N-Channel	10 V	670 mOhm	TO-251 (IPAK)	IPAK, TO-251-3 Short Leads, TO-251AA	Through Hole	85 W	410 pF	12.5 nC	-55 °C	150 °C	650 V	7 A	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	75	$ 1.34
		150	$ 1.11
		375	$ 1.08
		525	$ 0.94
		1875	$ 0.79
		3750	$ 0.75
		7500	$ 0.73
Newark	Each	1	$ 2.52
		10	$ 1.49
		100	$ 1.37
		500	$ 1.23
		1000	$ 1.21
		2500	$ 1.21
		6000	$ 1.21

Description

General part information

STU11 Series

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.Extremely low gate chargeLower RDS(on)x area vs previous generationLow gate input resistance100% avalanche testedZener-protected