POWER MOSFET, N CHANNEL, 7 A, 650 V, 0.6 OHM, 10 V, 3 V ROHS COMPLIANT: YES
| Part | Vgs(th) (Max) @ Id | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Mounting Type | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STU11N65M2 | 4 V | MOSFET (Metal Oxide) | N-Channel | 10 V | 670 mOhm | TO-251 (IPAK) | IPAK, TO-251-3 Short Leads, TO-251AA | Through Hole | 85 W | 410 pF | 12.5 nC | -55 °C | 150 °C | 650 V | 7 A | 25 V |