RN1706JE(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

Technical Specifications

Parameters and characteristics for this part

Specification	RN1706JE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-553
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	ESV
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Power - Max [Max]
Toshiba Semiconductor and Storage RN1706JE(TE85L,F)	250 MHz	2 NPN - Pre-Biased (Dual) (Emitter Coupled)	50 V	100 nA	Surface Mount	ESV	SOT-553	300 mV	100 mA	4.7 kOhms	80	47000 Ohms	100 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.39

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

Technical documentation and resources