Beta
⌘K
TRANS 2NPN PREBIAS 0.1W ESV
| Part | Frequency - Transition | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Mounting Type | Supplier Device Package | Package / Case | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 250 MHz | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 50 V | 100 nA | Surface Mount | ESV | SOT-553 | 300 mV | 100 mA | 4.7 kOhms | 80 | 47000 Ohms | 100 mW |