IAUC60N04S6L045HATMA1

NRND

IAUC60N04S6L045H IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4.5 MΩ MAX, PG-TDSON-8, OPTIMOS™ 6 WITH INTEGRATED HALF-BRIDGE SSO8 (5X6) FOR OPTIMIZED B6 APPS.

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IAUC60N04S6L045HATMA1

NRND

INFINEON

IAUC60N04S6L045H IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4.5 MΩ MAX, PG-TDSON-8, OPTIMOS™ 6 WITH INTEGRATED HALF-BRIDGE SSO8 (5X6) FOR OPTIMIZED B6 APPS.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IAUC60 Series

The dual SSO8 5x6 mm2package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A. Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC60N04S6L045HATMA1

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Tj)	60 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Max)	19 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1136 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Name	PG-TDSON-8-57
Power - Max (Tc)	52 W
Qualification	AEC-Q101
Rds On (Max)	4.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

IAUC60 Series

Part	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Qualification	Power Dissipation (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Mounting Type	Power - Max (Tc)	FET Feature	Channel Count	Configuration - Features	Configuration	Current - Continuous Drain (Id) (Tj)
INFINEON IAUC60N04S6N044ATMA1	3 V	20 V	1042 pF	40 V	N-Channel	Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101	42 W	18 nC	60 A	8-PowerTDFN	4.52 mOhm	10 V	7 V	PG-TDSON-8	Surface Mount
INFINEON IAUC60N04S6L039ATMA1	2 V	16 V	1179 pF	40 V	N-Channel	Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101	42 W	20 nC	60 A	8-PowerTDFN	4.02 mOhm	10 V	4.5 V	PG-TDSON-8	Surface Mount
INFINEON IAUC60N04S6L045HATMA1	2 V		1136 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		19 nC		8-PowerVDFN	4.5 mOhm			PG-TDSON-8-57	Surface Mount	52 W	Logic Level Gate	2	Half Bridge	N-Channel	60 A
INFINEON IAUC60N04S6L030HATMA1	2 V		2128 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		35 nC		8-PowerVDFN	3 mOhm			PG-TDSON-8-56	Surface Mount	75 W	Logic Level Gate	2	Half Bridge	N-Channel	60 A
INFINEON IAUC60N04S6N050HATMA1	3 V		1027 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		17 nC		8-PowerVDFN	5 mOhm			PG-TDSON-8-57	Surface Mount	52 W		2	Half Bridge	N-Channel	60 A
INFINEON IAUC60N04S6N031HATMA1	3 V		1922 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		30 nC		8-PowerVDFN	3.1 mOhm			PG-TDSON-8-56	Surface Mount	75 W		2	Half Bridge	N-Channel	60 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IAUC60N04S6L045HATMA1 | Datasheet

Datasheet