IAUC60 Series

Manufacturer: INFINEON

Catalog

IAUC60N04S6N044 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4.4 MΩ MAX, SSO8 (5X6), OPTIMOS™-6, IDEAL FOR AUTOMOTIVE APPLICATIONS.

Part	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Qualification	Power Dissipation (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Mounting Type	Power - Max (Tc)	FET Feature	Channel Count	Configuration - Features	Configuration	Current - Continuous Drain (Id) (Tj)
INFINEON IAUC60N04S6N044ATMA1	3 V	20 V	1042 pF	40 V	N-Channel	Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101	42 W	18 nC	60 A	8-PowerTDFN	4.52 mOhm	10 V	7 V	PG-TDSON-8	Surface Mount
INFINEON IAUC60N04S6L039ATMA1	2 V	16 V	1179 pF	40 V	N-Channel	Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101	42 W	20 nC	60 A	8-PowerTDFN	4.02 mOhm	10 V	4.5 V	PG-TDSON-8	Surface Mount
INFINEON IAUC60N04S6L045HATMA1	2 V		1136 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		19 nC		8-PowerVDFN	4.5 mOhm			PG-TDSON-8-57	Surface Mount	52 W	Logic Level Gate	2	Half Bridge	N-Channel	60 A
INFINEON IAUC60N04S6L030HATMA1	2 V		2128 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		35 nC		8-PowerVDFN	3 mOhm			PG-TDSON-8-56	Surface Mount	75 W	Logic Level Gate	2	Half Bridge	N-Channel	60 A
INFINEON IAUC60N04S6N050HATMA1	3 V		1027 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		17 nC		8-PowerVDFN	5 mOhm			PG-TDSON-8-57	Surface Mount	52 W		2	Half Bridge	N-Channel	60 A
INFINEON IAUC60N04S6N031HATMA1	3 V		1922 pF	40 V		Automotive	-55 °C	175 °C	MOSFET (Metal Oxide)	AEC-Q101		30 nC		8-PowerVDFN	3.1 mOhm			PG-TDSON-8-56	Surface Mount	75 W		2	Half Bridge	N-Channel	60 A