SSM6J501NU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 10A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 10A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J501NU,LF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	15.3 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Toshiba Semiconductor and Storage SSM6J501NU,LF	15.3 mOhm	8 V	P-Channel	29.9 nC	6-UDFNB (2x2)	150 °C	2600 pF	20 V	1 V	1.5 V 4.5 V	MOSFET (Metal Oxide)	1 W	10 A	Surface Mount

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General part information

P-Channel 20 V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources