Beta
⌘K
MOSFET P-CH 20V 10A 6UDFNB
| Part | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 15.3 mOhm | 8 V | P-Channel | 29.9 nC | 6-UDFNB (2x2) | 150 °C | 2600 pF | 20 V | 1 V | 1.5 V 4.5 V | MOSFET (Metal Oxide) | 1 W | 10 A | Surface Mount |