Specification	VS-50MT060PHTAPBF

Configuration	Half Bridge
Current - Collector (Ic) (Max)	121 A
Current - Collector Cutoff (Max)	100 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	6000 pF
Mounting Type	Through Hole
NTC Thermistor	Yes
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	12-MTP Module
Package Name	12-MTP
Power - Max	305 W
Vce(on) (Max)	1.64 V
Voltage - Collector Emitter Breakdown (Max)	600 V

50MT060 Series

Part	Package Name	Mounting Type	Power - Max	Configuration	Input Capacitance (Cies) @ Vce	Current - Collector Cutoff (Max)	Package / Case	Input	Current - Collector (Ic) (Max)	Vce(on) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	NTC Thermistor
Vishay General Semiconductor - Diodes Division VS-50MT060WHTAPBF	MTP	Chassis Mount	658 W	Half Bridge	7.1 nF	400 µA	12-MTP Module	Standard	114 A	3.2 V	-40 °C	150 °C	600 V
Vishay General Semiconductor - Diodes Division VS-50MT060TFT	20-MTP	Chassis Mount	144 VA	Full Bridge	3000 pF	40 µA	20-MTP Module	Standard	55 A	2.1 V	-40 °C	175 °C	600 V	Trench Field Stop
Vishay General Semiconductor - Diodes Division VS-50MT060PHTAPBF	12-MTP	Through Hole	305 W	Half Bridge	6000 pF	100 µA	12-MTP Module	Standard	121 A	1.64 V	-40 °C	150 °C	600 V	Trench Field Stop	Yes
Vishay General Semiconductor - Diodes Division 50MT060ULS	10-MTP	Chassis Mount	445 W	Single	14.7 nF	250 µA	10-MTP	Standard	100 A	2.55 V	-40 °C	150 °C	600 V

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