50MT060 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 114A 658W MTP
| Part | Package Name | Mounting Type | Power - Max | Configuration | Input Capacitance (Cies) @ Vce | Current - Collector Cutoff (Max) | Package / Case | Input | Current - Collector (Ic) (Max) | Vce(on) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | NTC Thermistor |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MTP | Chassis Mount | 658 W | Half Bridge | 7.1 nF | 400 µA | 12-MTP Module | Standard | 114 A | 3.2 V | -40 °C | 150 °C | 600 V | ||
Vishay General Semiconductor - Diodes Division | 20-MTP | Chassis Mount | 144 VA | Full Bridge | 3000 pF | 40 µA | 20-MTP Module | Standard | 55 A | 2.1 V | -40 °C | 175 °C | 600 V | Trench Field Stop | |
Vishay General Semiconductor - Diodes Division | 12-MTP | Through Hole | 305 W | Half Bridge | 6000 pF | 100 µA | 12-MTP Module | Standard | 121 A | 1.64 V | -40 °C | 150 °C | 600 V | Trench Field Stop | Yes |
Vishay General Semiconductor - Diodes Division | 10-MTP | Chassis Mount | 445 W | Single | 14.7 nF | 250 µA | 10-MTP | Standard | 100 A | 2.55 V | -40 °C | 150 °C | 600 V |