Zenode.ai Logo
Beta
K
AONV210A60 - 4-DFN

AONV210A60

Active
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4.1A/20A 4DFN

Deep-Dive with AI

Search across all available documentation for this part.

AONV210A60 - 4-DFN

AONV210A60

Active
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4.1A/20A 4DFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAONV210A60
Current - Continuous Drain (Id) @ 25°C20 A, 4.1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds1935 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-PowerTSFN
Power Dissipation (Max)8.3 W, 208 W
Rds On (Max) @ Id, Vgs210 mOhm
Supplier Device Package4-DFN (8x8)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.90
Digi-Reel® 1$ 3.90
Tape & Reel (TR) 3500$ 1.90

Description

General part information

AONV210 Series

N-Channel 600 V 4.1A (Ta), 20A (Tc) 8.3W (Ta), 208W (Tc) Surface Mount 4-DFN (8x8)

Documents

Technical documentation and resources

No documents available