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MOSFET N-CH 600V 4.1A/20A 4DFN
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 4-DFN (8x8) | 34 nC | N-Channel | -55 °C | 150 °C | 20 V | 4-PowerTSFN | 4.1 A 20 A | 1935 pF | 10 V | MOSFET (Metal Oxide) | Surface Mount | 600 V | 8.3 W 208 W | 210 mOhm | 4 V |