SSM3K127TU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2A UFM

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K127TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	123 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	123 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage SSM3K127TU,LF	30 V	N-Channel	123 pF	123 mOhm	150 °C	1 V	12 V	500 mW	2 A	UFM	1.8 V 4 V	Surface Mount	MOSFET (Metal Oxide)	1.5 nC

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General part information

N-Channel 30 V 2A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources