MOSFET N-CH 30V 2A UFM
| Part | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Operating Temperature | Vgs(th) (Max) @ Id | Vgs (Max) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | N-Channel | 123 pF | 123 mOhm | 150 °C | 1 V | 12 V | 500 mW | 2 A | UFM | 1.8 V 4 V | Surface Mount | MOSFET (Metal Oxide) | 1.5 nC |