Specification	IR2011SPBF

Channel Type	Independent
Current - Peak Output (Sink)	1 A
Current - Peak Output (Source)	1 A
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	20 ns
Gate Channel	N-Channel
Gate Type	MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	200 V
Input Type	Inverting
Logic Voltage - VIH	2.2 V
Logic Voltage - VIL	0.7 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	35 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2011 Series

Part	Package Length	Package Name	Package Width	Input Type	Logic Voltage - VIH	Logic Voltage - VIL	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Fall Time (Typ)	Rise Time (Typ)	Channel Type	Driven Configuration	Mounting Type	Gate Channel	Gate Type	High Side Voltage - Max (Bootstrap)
INFINEON IR2011SPBF	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011STR	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011STRPBF	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Through Hole	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011S	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011PBF	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Through Hole	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011PBF	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Through Hole		N-Channel MOSFET	200 V

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Datasheet

Technical Data Sheet EN

IR2011SPBF | Datasheet