IR2011 Series

Manufacturer: INFINEON

Catalog

GATE DRIVERS 200V HIGH & LOW-SIDE ,1A,80NS,DSO-8

Part	Package Length	Package Name	Package Width	Input Type	Logic Voltage - VIH	Logic Voltage - VIL	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Fall Time (Typ)	Rise Time (Typ)	Channel Type	Driven Configuration	Mounting Type	Gate Channel	Gate Type	High Side Voltage - Max (Bootstrap)
INFINEON IR2011SPBF	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011STR	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011STRPBF	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Through Hole	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011S	0.154 in	8-SOIC	3.9 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Surface Mount	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011PBF	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Through Hole	N-Channel	MOSFET N-Channel MOSFET	200 V
INFINEON IR2011PBF	0.3 in	8-DIP 8-PDIP	7.62 mm	Inverting	2.2 V	0.7 V	-40 °C	150 °C	2	10 VDC	20 V	1 A	1 A	20 ns	35 ns	Independent	High-Side Low-Side	Through Hole		N-Channel MOSFET	200 V