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IXFK90N60X

Obsolete
IXYS

MOSFET N-CH 600V 90A TO264

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IXFK90N60X

Obsolete
IXYS

MOSFET N-CH 600V 90A TO264

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFK90N60X
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]210 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-264AA, TO-264-3
Power Dissipation (Max) [Max]1100 W
Rds On (Max) @ Id, Vgs38 mOhm
Supplier Device PackageTO-264AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFK90 Series

N-Channel 600 V 90A (Tc) 1100W (Tc) Through Hole TO-264AA

Documents

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