MOSFET N-CH 600V 90A TO264
| Part | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 30 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 38 mOhm | 600 V | Through Hole | TO-264-3 TO-264AA | 4.5 V | TO-264AA | 10 V | 8500 pF | 210 nC | N-Channel | 1100 W | 90 A | |||||
IXYS | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 23 mOhm | 200 V | Through Hole | TO-264-3 TO-264AA | 4 V | TO-264AA (IXFK) | 10 V | 380 nC | N-Channel | 90 A | 9000 pF | 500 W | |||||
IXYS | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 33 mOhm | 300 V | Through Hole | TO-264-3 TO-264AA | 4 V | TO-264AA (IXFK) | 10 V | N-Channel | 560 W | 90 A | 10000 pF | 360 nC | |||||
IXYS | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 200 V | Through Hole | TO-264-3 TO-264AA | TO-264AA (IXFK) | 10 V | 190 nC | N-Channel | 90 A | 6800 pF | 500 W | 4 V | 22 mOhm |