NX3008NBKMB,315

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Nexperia USA Inc.

30 V, SINGLE N-CHANNEL TRENCH MOSFET

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NX3008NBKMB,315

Unknown

Nexperia USA Inc.

30 V, SINGLE N-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

NX3008 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	NX3008NBKMB,315

Current - Continuous Drain (Id) (Ta)	530 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	0.68 nC
Input Capacitance (Ciss) (Max)	50 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XFDFN
Package Name	DFN1006B-3
Power Dissipation (Max)	360 mW, 2.7 W
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.1 V

NX3008 Series

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Qualification	Channel Count	Configuration	Configuration - Features	Package / Case	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Power - Max	Technology	Rds On (Max)	Package Name	Current - Continuous Drain (Id)	Grade	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Operating Temperature
Nexperia USA Inc. NX3008PBKS,115	0.75 nC	46 pF	AEC-Q101	2	P-Channel	Dual	6-TSSOP SC-88 SOT-363	Logic Level Gate	-55 °C	150 °C	Surface Mount	1.1 V	30 V	445 mW	MOSFET (Metal Oxide)	4.1 Ohm	6-TSSOP	200 mA	Automotive
Nexperia USA Inc. NX3008PBKV,115	0.72 nC	46 pF	AEC-Q101	2	P-Channel	Dual	SOT-563 SOT-666	Logic Level Gate	-55 °C	150 °C	Surface Mount	1.1 V	30 V	0.5 W	MOSFET (Metal Oxide)	4.1 Ohm	SOT-666	220 mA	Automotive
Nexperia USA Inc. NX3008NBKW,115	0.68 nC	50 pF	AEC-Q101				SC-70 SOT-323		-55 °C	150 °C	Surface Mount	1.1 V	30 V		MOSFET (Metal Oxide)	1.4 Ohm	SOT-323		Automotive	8 V	350 mA	N-Channel	260 mW 830 mW	4.5 V	1.8 V
Nexperia USA Inc. NX3008NBK,215	0.68 nC	50 pF	AEC-Q101				SC-59 SOT-23-3 TO-236-3		-55 °C	150 °C	Surface Mount	1.1 V	30 V		MOSFET (Metal Oxide)	1.4 Ohm	TO-236AB		Automotive	8 V		N-Channel	1.14 W 350 mW	4.5 V	1.8 V	400 mA
Nexperia USA Inc. NX3008CBKS,115	0.68 nC	50 pF	AEC-Q101		N P-Channel		6-TSSOP SC-88 SOT-363	Logic Level Gate	-55 °C	150 °C	Surface Mount	1.1 V	30 V	445 mW	MOSFET (Metal Oxide)	1.4 Ohm	6-TSSOP		Automotive								350 mA	200 mA
Nexperia USA Inc. NX3008PBKMB,315	0.72 nC	46 pF					3-XFDFN SC-101 SOT-883		-55 °C	150 °C	Surface Mount	1.1 V	30 V		MOSFET (Metal Oxide)	4.1 Ohm	DFN1006B-3			8 V	300 mA	P-Channel	2.7 W 360 mW	4.5 V	1.8 V
Nexperia USA Inc. NX3008NBKV,115	0.68 nC	50 pF	AEC-Q101	2	N-Channel	Dual	SOT-563 SOT-666	Logic Level Gate	-55 °C	150 °C	Surface Mount	1.1 V	30 V	0.5 W	MOSFET (Metal Oxide)	1.4 Ohm	SOT-666	400 mA	Automotive
Nexperia USA Inc. NX3008PBKW,115	0.72 nC	46 pF	AEC-Q101				SC-70 SOT-323		-55 °C	150 °C	Surface Mount	1.1 V	30 V		MOSFET (Metal Oxide)	4.1 Ohm	SOT-323		Automotive	8 V	200 mA	P-Channel	260 mW 830 mW	4.5 V	2.5 V
Nexperia USA Inc. NX3008NBKVL	0.68 nC	50 pF	AEC-Q101				SC-59 SOT-23-3 TO-236-3				Surface Mount	1.1 V	30 V		MOSFET (Metal Oxide)	1.4 Ohm	TO-236AB		Automotive	8 V	400 mA	N-Channel	1.14 W 350 mW	4.5 V	1.8 V				150 °C
Nexperia USA Inc. NX3008NBKMB,315	0.68 nC	50 pF					3-XFDFN		-55 °C	150 °C	Surface Mount	1.1 V	30 V		MOSFET (Metal Oxide)	1.4 Ohm	DFN1006B-3			8 V	530 mA	N-Channel	2.7 W 360 mW	4.5 V	1.8 V