IXFQ10N80P

Obsolete

IXYS

MOSFET N-CH 800V 10A TO3P

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Obsolete

IXYS

MOSFET N-CH 800V 10A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ10N80P

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2050 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXFQ10N80P	MOSFET (Metal Oxide)	N-Channel	2050 pF	30 V	TO-3P	300 W	10 A	800 V	40 nC	5.5 V	Through Hole	SC-65-3 TO-3P-3	1.1 Ohm	-55 °C	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 10A (Tc) 300W (Tc) Through Hole TO-3P

Technical documentation and resources