Beta
⌘K
MOSFET N-CH 800V 10A TO3P
| Part | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | MOSFET (Metal Oxide) | N-Channel | 2050 pF | 30 V | TO-3P | 300 W | 10 A | 800 V | 40 nC | 5.5 V | Through Hole | SC-65-3 TO-3P-3 | 1.1 Ohm | -55 °C | 150 °C | 10 V |