SSM3J132TU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 12V 5.4A UFM

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Toshiba Semiconductor and Storage

MOSFET P-CH 12V 5.4A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J132TU,LF

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3J132TU,LF	17 mOhm	Surface Mount	P-Channel	5.4 A	MOSFET (Metal Oxide)	1.2 V 4.5 V	12 V	UFM	2700 pF	33 nC	6 V	150 °C	1 V	500 mW

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General part information

P-Channel 12 V 5.4A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources

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