MOSFET P-CH 12V 5.4A UFM
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Operating Temperature | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 17 mOhm | Surface Mount | P-Channel | 5.4 A | MOSFET (Metal Oxide) | 1.2 V 4.5 V | 12 V | UFM | 2700 pF | 33 nC | 6 V | 150 °C | 1 V | 500 mW |