Specification	SI1013X-T1-E3

Current - Continuous Drain (Id) (Ta)	350 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	1.5 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-490, SC-89
Package Name	SC-89-3
Power Dissipation (Max)	250 mW
Rds On (Max)	1.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max)	450 mV

SI1013 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Rds On (Max)	Mounting Type	Package Name	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Vgs (Max)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)
Vishay Dale SI1013X-T1-E3	-55 °C	150 °C	350 mA	P-Channel	1.2 Ohm	Surface Mount	SC-89-3	1.5 nC	4.5 V	1.8 V	450 mV	6 V	SC-89 SOT-490	MOSFET (Metal Oxide)	20 V	250 mW
Vishay Dale SI1013CX-T1-GE3	-55 °C	150 °C	450 mA	P-Channel	760 mOhm	Surface Mount	SC-89-3	2.5 nC			1 V	8 V	SC-89 SOT-490	MOSFET (Metal Oxide)	20 V	190 mW	4.5 V	45 pF
Vishay Dale SI1013R-T1-GE3	-55 °C	150 °C	350 mA	P-Channel	1.2 Ohm	Surface Mount	SC-75A	1.5 nC	4.5 V	1.8 V	450 mV	6 V	SC-75 SOT-416	MOSFET (Metal Oxide)	20 V	150 mW
Vishay Dale SI1013X-T1-GE3	-55 °C	150 °C	350 mA	P-Channel	1.2 Ohm	Surface Mount	SC-89-3	1.5 nC	4.5 V	1.8 V	450 mV	6 V	SC-89 SOT-490	MOSFET (Metal Oxide)	20 V	250 mW

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