IXFT58N20

Active

IXYS

MOSFET N-CH 200V 58A TO268

Search across all available documentation for this part.

Active

IXYS

MOSFET N-CH 200V 58A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT58N20

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFT58N20Q TRL	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	20 V	140 nC	4 V	10 V	40 mOhm	-55 °C	150 °C	N-Channel	TO-268HV (IXFT)	300 W	Surface Mount	200 V	MOSFET (Metal Oxide)	3600 pF	58 A
IXYS IXFT58N20	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	20 V		4 V	10 V	40 mOhm	-55 °C	150 °C	N-Channel	TO-268AA	300 W	Surface Mount	200 V	MOSFET (Metal Oxide)		58 A	4400 pF	220 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 58A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources