MOSFET N-CH 200V 58A TO268
| Part | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Power Dissipation (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 20 V | 140 nC | 4 V | 10 V | 40 mOhm | -55 °C | 150 °C | N-Channel | TO-268HV (IXFT) | 300 W | Surface Mount | 200 V | MOSFET (Metal Oxide) | 3600 pF | 58 A | ||
IXYS | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 20 V | 4 V | 10 V | 40 mOhm | -55 °C | 150 °C | N-Channel | TO-268AA | 300 W | Surface Mount | 200 V | MOSFET (Metal Oxide) | 58 A | 4400 pF | 220 nC |