VEC2616-TL-W

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ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A SOT28

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ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A SOT28

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General part information

Mosfet Array 60V 3A, 2.5A 1W Surface Mount SOT-28FL/VEC8

Technical documentation and resources

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Parameters and characteristics commom to parts in this series

Specification	VEC2616-TL-W	VEC2616 Series

Configuration	N and P-Channel	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A, 2.5 A	2.5 - 3 A
Drain to Source Voltage (Vdss)	60 V	60 V
FET Feature	4V Drive, Logic Level Gate	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC	10 nC
Input Capacitance (Ciss) (Max) @ Vds	505 pF	505 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature	150 °C	150 °C
Power - Max [Max]	1 W	1 W
Rds On (Max) @ Id, Vgs	80 mOhm	80 mOhm
Supplier Device Package	SOT-28FL/VEC8	SOT-28FL/VEC8
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V	2.6 V

MOSFET N/P-CH 60V 3A/2.5A SOT28

Part	FET Feature	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Operating Temperature
ON Semiconductor VEC2616-TL-H-Z	4V Drive, Logic Level Gate	MOSFET (Metal Oxide)	SOT-28FL/VEC8	60 V	Surface Mount	10 nC	505 pF	1 W	2.5 A, 3 A	80 mOhm	N and P-Channel
ON Semiconductor VEC2616-TL-H	Logic Level Gate	MOSFET (Metal Oxide)	SOT-28FL/VEC8	60 V	Surface Mount	10 nC	505 pF	1 W	2.5 A, 3 A	80 mOhm	N and P-Channel	2.6 V	150 °C
ON Semiconductor VEC2616-TL-W	4V Drive, Logic Level Gate	MOSFET (Metal Oxide)	SOT-28FL/VEC8	60 V	Surface Mount	10 nC	505 pF	1 W	2.5 A, 3 A	80 mOhm	N and P-Channel	2.6 V	150 °C
ON Semiconductor VEC2616-TL-W-Z	4V Drive, Logic Level Gate	MOSFET (Metal Oxide)	SOT-28FL/VEC8	60 V	Surface Mount	10 nC	505 pF	1 W	2.5 A, 3 A	80 mOhm	N and P-Channel	2.6 V	150 °C