MOSFET N/P-CH 60V 3A/2.5A SOT28
Part | FET Feature | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Configuration | Vgs(th) (Max) @ Id | Operating Temperature |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor VEC2616-TL-H-Z | 4V Drive, Logic Level Gate | MOSFET (Metal Oxide) | SOT-28FL/VEC8 | 60 V | Surface Mount | 10 nC | 505 pF | 1 W | 2.5 A, 3 A | 80 mOhm | N and P-Channel | ||
ON Semiconductor VEC2616-TL-H | Logic Level Gate | MOSFET (Metal Oxide) | SOT-28FL/VEC8 | 60 V | Surface Mount | 10 nC | 505 pF | 1 W | 2.5 A, 3 A | 80 mOhm | N and P-Channel | 2.6 V | 150 °C |
ON Semiconductor VEC2616-TL-W | 4V Drive, Logic Level Gate | MOSFET (Metal Oxide) | SOT-28FL/VEC8 | 60 V | Surface Mount | 10 nC | 505 pF | 1 W | 2.5 A, 3 A | 80 mOhm | N and P-Channel | 2.6 V | 150 °C |
ON Semiconductor VEC2616-TL-W-Z | 4V Drive, Logic Level Gate | MOSFET (Metal Oxide) | SOT-28FL/VEC8 | 60 V | Surface Mount | 10 nC | 505 pF | 1 W | 2.5 A, 3 A | 80 mOhm | N and P-Channel | 2.6 V | 150 °C |