SPP10N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 10.3A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 10.3A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP10N10

Current - Continuous Drain (Id) @ 25°C	10.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.4 nC
Input Capacitance (Ciss) (Max) @ Vds	426 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies SPP10N10	100 V	10.3 A	426 pF	MOSFET (Metal Oxide)	170 mOhm	19.4 nC	N-Channel	50 W	4 V	PG-TO220-3-1	-55 °C	175 ░C	20 V	TO-220-3	10 V	Through Hole
Infineon Technologies SPP10N10L	100 V	10.3 A		MOSFET (Metal Oxide)	154 mOhm		N-Channel	50 W	2 V	PG-TO220-3-1	-55 °C	175 ░C	20 V	TO-220-3	4.5 V 10 V	Through Hole	444 pF	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 10.3A (Tc) 50W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources