SPP10N Series

Catalog

MOSFET N-CH 100V 10.3A TO220-3

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies SPP10N10	100 V	10.3 A	426 pF	MOSFET (Metal Oxide)	170 mOhm	19.4 nC	N-Channel	50 W	4 V	PG-TO220-3-1	-55 °C	175 ░C	20 V	TO-220-3	10 V	Through Hole
Infineon Technologies SPP10N10L	100 V	10.3 A		MOSFET (Metal Oxide)	154 mOhm		N-Channel	50 W	2 V	PG-TO220-3-1	-55 °C	175 ░C	20 V	TO-220-3	4.5 V 10 V	Through Hole	444 pF	22 nC