CMS10I30A(TE12L,QM

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A M-FLAT

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A M-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMS10I30A(TE12L,QM

Capacitance @ Vr, F	82 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOD-128
Speed	200 mA, 500 ns
Supplier Device Package	M-FLAT (2.4x3.8)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	360 mV

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Toshiba Semiconductor and Storage CMS10I30A(TE12L,QM	1 A	82 pF	30 V	Schottky	150 °C	360 mV	Surface Mount	SOD-128	100 µA	200 mA 500 ns	M-FLAT (2.4x3.8)
Toshiba Semiconductor and Storage CMS10(TE12L,Q,M)	1 A	50 pF	40 V	Schottky		550 mV	Surface Mount	SOD-128	500 µA	200 mA 500 ns	M-FLAT (2.4x3.8)	150 °C	-40 °C

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General part information

Diode 30 V 1A Surface Mount M-FLAT (2.4x3.8)

Technical documentation and resources