DIODE SCHOTTKY 30V 1A M-FLAT
| Part | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Package / Case | Current - Reverse Leakage @ Vr | Speed | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 A | 82 pF | 30 V | Schottky | 150 °C | 360 mV | Surface Mount | SOD-128 | 100 µA | 200 mA 500 ns | M-FLAT (2.4x3.8) | ||
Toshiba Semiconductor and Storage | 1 A | 50 pF | 40 V | Schottky | 550 mV | Surface Mount | SOD-128 | 500 µA | 200 mA 500 ns | M-FLAT (2.4x3.8) | 150 °C | -40 °C |