Specification	MCP14E4-E/SL

Channel Type	Independent
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	4 A
Driven Configuration	Low-Side
Fall Time (Typ)	18 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	2.4 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	16-SOIC
Package Width	3.9 mm
Rise Time (Typ)	15 ns
Voltage - Supply (Maximum)	18 V
Voltage - Supply (Minimum)	4.5 V

MCP14E4 Series

Part	Gate Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Package Width	Package Name	Package Length	Driven Configuration	Rise Time (Typ)	Fall Time (Typ)	Gate Channel	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Channel Type	Input Type	Package / Case	Grade	Qualification
Microchip Technology MCP14E4-E/SL	IGBT MOSFET N-Channel P-Channel MOSFET	4 A	4 A	2.4 V	0.8 V	2	3.9 mm	16-SOIC	0.154 in	Low-Side	15 ns	18 ns	N-Channel P-Channel	Surface Mount	-40 °C	150 °C	18 V	4.5 V	Independent	Non-Inverting
Microchip Technology MCP14E4T-E/MF	IGBT MOSFET N-Channel P-Channel MOSFET	4 A	4 A	2.4 V	0.8 V	2	5 mm	8-DFN-S	6 mm	Low-Side	15 ns	18 ns	N-Channel P-Channel	Surface Mount	-40 °C	150 °C	18 V	4.5 V	Independent	Non-Inverting	8-VDFN Exposed Pad
Microchip Technology MCP14E4T-E/SNVAO	IGBT MOSFET N-Channel P-Channel MOSFET	4 A	4 A	2.4 V	0.8 V	2	3.9 mm	8-SOIC	0.154 in	Low-Side	15 ns	18 ns	N-Channel P-Channel	Surface Mount	-40 °C	125 °C	18 V	4.5 V	Independent	Non-Inverting		Automotive	AEC-Q100
Microchip Technology MCP14E4T-E/SN	IGBT MOSFET	4 A	4 A	2.4 V	0.8 V	2	3.9 mm	8-SOIC	0.154 in	Low-Side	15 ns	18 ns	N-Channel P-Channel	Surface Mount	-40 °C	150 °C	18 V	4.5 V	Independent	Non-Inverting
Microchip Technology MCP14E4-E/SN	IGBT MOSFET N-Channel P-Channel MOSFET	4 A	4 A	2.4 V	0.8 V	2	3.9 mm	8-SOIC	0.154 in	Low-Side	15 ns	18 ns	N-Channel P-Channel	Surface Mount	-40 °C	150 °C	18 V	4.5 V	Independent	Non-Inverting
Microchip Technology MCP14E4-E/P	IGBT MOSFET N-Channel P-Channel MOSFET	4 A	4 A	2.4 V	0.8 V	2	7.62 mm	8-DIP 8-PDIP	0.3 in	Low-Side	15 ns	18 ns	N-Channel P-Channel	Through Hole	-40 °C	150 °C	18 V	4.5 V	Independent	Non-Inverting
Microchip Technology MCP14E4-E/MF	IGBT MOSFET N-Channel P-Channel MOSFET	4 A	4 A	2.4 V	0.8 V	2	5 mm	8-DFN-S	6 mm	Low-Side	15 ns	18 ns	N-Channel P-Channel	Surface Mount	-40 °C	150 °C	18 V	4.5 V	Independent	Non-Inverting	8-VDFN Exposed Pad

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MCP14E4-E/SL | Datasheet