
MCP14E4 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 16SOIC
| Part | Gate Type | Current - Peak Output (Source) | Current - Peak Output (Sink) | Logic Voltage - VIH | Logic Voltage - VIL | Number of Drivers | Package Width | Package Name | Package Length | Driven Configuration | Rise Time (Typ) | Fall Time (Typ) | Gate Channel | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Channel Type | Input Type | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 3.9 mm | 16-SOIC | 0.154 in | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Surface Mount | -40 °C | 150 °C | 18 V | 4.5 V | Independent | Non-Inverting | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 5 mm | 8-DFN-S | 6 mm | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Surface Mount | -40 °C | 150 °C | 18 V | 4.5 V | Independent | Non-Inverting | 8-VDFN Exposed Pad | ||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 3.9 mm | 8-SOIC | 0.154 in | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Surface Mount | -40 °C | 125 °C | 18 V | 4.5 V | Independent | Non-Inverting | Automotive | AEC-Q100 | |
Microchip Technology | IGBT MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 3.9 mm | 8-SOIC | 0.154 in | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Surface Mount | -40 °C | 150 °C | 18 V | 4.5 V | Independent | Non-Inverting | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 3.9 mm | 8-SOIC | 0.154 in | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Surface Mount | -40 °C | 150 °C | 18 V | 4.5 V | Independent | Non-Inverting | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 7.62 mm | 8-DIP 8-PDIP | 0.3 in | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Through Hole | -40 °C | 150 °C | 18 V | 4.5 V | Independent | Non-Inverting | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 4 A | 4 A | 2.4 V | 0.8 V | 2 | 5 mm | 8-DFN-S | 6 mm | Low-Side | 15 ns | 18 ns | N-Channel P-Channel | Surface Mount | -40 °C | 150 °C | 18 V | 4.5 V | Independent | Non-Inverting | 8-VDFN Exposed Pad |