TPCC8105,L1Q
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0078 Ω@10V, TSON ADVANCE, U-MOSⅥ
TPCC8105,L1Q
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0078 Ω@10V, TSON ADVANCE, U-MOSⅥ
Description
General part information
TPCC8105 Series
P-Channel 30 V 23A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Technical Specifications
Parameters and characteristics for this part
| Specification | TPCC8105,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 23 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 76 nC, 76 nC |
| Input Capacitance (Ciss) (Max) | 3240 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Package Length | 3.3 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 700 mW, 30 W |
| Rds On (Max) | 7.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -25 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TPCC8105,L1Q | Datasheet
Datasheet
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET SPICE model grade
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Hints and Tips for Thermal Design part3
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Maximum Ratings: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon
The thermal stability and thermal design:Bipolar Transistor Application Notes
The maximum ratings:Bipolar Transistor Application Notes
Motor Control (Vacuum Cleaners)
TPCC8105 Data sheet/Japanese
Simplified CFD Model Application Note
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
MOSFET Secondary Breakdown
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
The terms used in data sheets:Bipolar Transistor Application Notes