TPCC8105 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, 0.0078 Ω@10V, TSON ADVANCE, U-MOSⅥ
| Part | Operating Temperature | Technology | Package Name | Package Length | Package Width | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Mounting Type | Rds On (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Package / Case | Vgs(th) (Max) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | 8-TSON Advance | 3.3 mm | 3.3 mm | 10 V | 4.5 V | P-Channel | Surface Mount | 7.8 mOhm | -25 V | 20 V | 8-VDFN Exposed Pad | 2 V | 23 A | 30 V | 30 W 700 mW | 3240 pF | 76 nC 76 nC |
Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | 8-TSON Advance | 3.3 mm | 3.3 mm | 10 V | 4.5 V | P-Channel | Surface Mount | 7.8 mOhm | -25 V | 20 V | 8-VDFN Exposed Pad | 2 V | 23 A | 30 V | 30 W 700 mW | 3240 pF | 76 nC 76 nC |