SIDC11D60SIC3

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Infineon Technologies

DIODE SIL CARB 600V 4A WAFER

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Unknown

Infineon Technologies

DIODE SIL CARB 600V 4A WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC11D60SIC3

Capacitance @ Vr, F	150 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	Die
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	Sawn on foil
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

Part	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Infineon Technologies SIDC11D60SIC3	SiC (Silicon Carbide) Schottky	Die	175 ░C	-55 C	0 ns	Sawn on foil	Surface Mount	No Recovery Time	200 µA	150 pF	600 V	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3459	$ 2.64

General part information

Diode 600 V 4A Surface Mount Sawn on foil

Technical documentation and resources