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DIODE SIL CARB 600V 4A WAFER
| Part | Technology | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Supplier Device Package | Mounting Type | Speed | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SiC (Silicon Carbide) Schottky | Die | 175 ░C | -55 C | 0 ns | Sawn on foil | Surface Mount | No Recovery Time | 200 µA | 150 pF | 600 V | 4 A |