AON7934_101

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13A 8DFN

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON7934_101

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	13 A, 16 A, 15 A, 18 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC, 11 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-WDFN Exposed Pad
Power - Max	25 W, 23 W, 2.5 W
Rds On (Max) @ Id, Vgs	7.7 mOhm, 10.2 mOhm
Supplier Device Package	8-DFN-EP (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power - Max	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Supplier Device Package	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AON7934_101	8-WDFN Exposed Pad	MOSFET (Metal Oxide)	11 nC 17.5 nC	Surface Mount	2.5 W 23 W 25 W	30 V	2.2 V	-55 °C	150 °C	13 A 15 A 16 A 18 A	2 N-Channel (Dual)	8-DFN-EP (3x3)	7.7 mOhm 10.2 mOhm
Alpha & Omega Semiconductor Inc. AON7934_102	8-WDFN Exposed Pad	MOSFET (Metal Oxide)	11 nC 17.5 nC	Surface Mount	2.5 W 23 W 25 W	30 V	2.2 V	-55 °C	150 °C	13 A 15 A 16 A 18 A	2 N-Channel (Dual) Asymmetrical	8-DFN-EP (3x3)	7.7 mOhm 10.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) Surface Mount 8-DFN-EP (3x3)

Technical documentation and resources