AON793 Series
Manufacturer: Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 30V 13A 8DFN
| Part | Input Capacitance (Ciss) (Max) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Channel Count | Configuration | Configuration - Features | Gate Charge (Max) | Power - Max (Ta) | Power - Max (Tc) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) (2) | Current - Continuous Drain (Id) (Tc) (2) | Vgs(th) (Max) | Rds On (Max) | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Package Width | Package Name | Package Length | Current - Continuous Drain (Id) (Maximum) | Current - Continuous Drain (Id) (Typical) | FET Feature | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 485 pF 807 pF | 8-WDFN Exposed Pad | -55 °C | 150 °C | 2 | N-Channel | Dual | 11 nC 17.5 nC | 2.5 W | 23 W 25 W | 13 A | 16 A | 15 A | 18 A | 2.2 V | 7.7 mOhm 10.2 mOhm | MOSFET (Metal Oxide) | Surface Mount | 30 V | 3 mm | 8-DFN-EP | 3 mm | ||||
Alpha & Omega Semiconductor Inc. | 460 pF | 8-WDFN Exposed Pad | -55 °C | 150 °C | 2 | N-Channel | Dual | 6.5 nC | 2.4 V | 20 mOhm | MOSFET (Metal Oxide) | Surface Mount | 30 V | 3 mm | 8-DFN-EP | 3 mm | 8.1 A | 6.6 A | Logic Level Gate | 1.4 W | ||||||
Alpha & Omega Semiconductor Inc. | 485 pF 807 pF | 8-WDFN Exposed Pad | -55 °C | 150 °C | 2 | Asymmetrical N-Channel | Dual | 11 nC 17.5 nC | 2.5 W | 23 W 25 W | 13 A | 16 A | 15 A | 18 A | 2.2 V | 7.7 mOhm 10.2 mOhm | MOSFET (Metal Oxide) | Surface Mount | 30 V | 3 mm | 8-DFN-EP | 3 mm |