IR2109PBF

NRND

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT

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IR2109PBF

NRND

INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2109 Series

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP. For the new version with ourSOI technologywe recommend2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IR2109PBF

Channel Type	Synchronous
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-PDIP, 8-DIP
Package Width	7.62 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2109 Series

Part	Gate Type	Number of Drivers	Package Name	Input Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Channel	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Package Length	Package Width	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Driven Configuration	Current - Peak Output (Source)	Current - Peak Output (Sink)	Channel Type	Fall Time (Typ)	Rise Time (Typ)
INFINEON IR2109STR	IGBT MOSFET N-Channel MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	3.9 mm	10 VDC	20 V	Half-Bridge	200 mA	0.35 A	Synchronous	50 ns	150 ns
INFINEON IR2109SPBF	IGBT MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	3.9 mm	10 VDC	20 V	Half-Bridge	200 mA	0.35 A	Synchronous	50 ns	150 ns
INFINEON IR2109	IGBT MOSFET N-Channel MOSFET	2	8-DIP 8-PDIP	Non-Inverting	-40 °C	150 °C	Through Hole	N-Channel	0.8 V	2.9 V	600 V	0.3 in	7.62 mm	10 VDC	20 V	Half-Bridge	200 mA	0.35 A	Synchronous	50 ns	150 ns
INFINEON IR2109PBF	IGBT MOSFET N-Channel MOSFET	2	8-DIP 8-PDIP	Non-Inverting	-40 °C	150 °C	Through Hole	N-Channel	0.8 V	2.9 V	600 V	0.3 in	7.62 mm	10 VDC	20 V	Half-Bridge	200 mA	0.35 A	Synchronous	50 ns	150 ns
INFINEON IR2109PBF
INFINEON IR2109SPBF	IGBT MOSFET N-Channel MOSFET	2	8-SOIC	Non-Inverting	-40 °C	150 °C	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	3.9 mm	10 VDC	20 V	Half-Bridge	200 mA	0.35 A	Synchronous	50 ns	150 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR2109PBF | Datasheet