IR2109 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Gate Type | Number of Drivers | Package Name | Input Type | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Gate Channel | Logic Voltage - VIL | Logic Voltage - VIH | High Side Voltage - Max (Bootstrap) | Package Length | Package Width | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Driven Configuration | Current - Peak Output (Source) | Current - Peak Output (Sink) | Channel Type | Fall Time (Typ) | Rise Time (Typ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 8-SOIC | Non-Inverting | -40 °C | 150 °C | Surface Mount | N-Channel | 0.8 V | 2.9 V | 600 V | 0.154 in | 3.9 mm | 10 VDC | 20 V | Half-Bridge | 200 mA | 0.35 A | Synchronous | 50 ns | 150 ns |
INFINEON | IGBT MOSFET | 2 | 8-SOIC | Non-Inverting | -40 °C | 150 °C | Surface Mount | N-Channel | 0.8 V | 2.9 V | 600 V | 0.154 in | 3.9 mm | 10 VDC | 20 V | Half-Bridge | 200 mA | 0.35 A | Synchronous | 50 ns | 150 ns |
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 8-DIP 8-PDIP | Non-Inverting | -40 °C | 150 °C | Through Hole | N-Channel | 0.8 V | 2.9 V | 600 V | 0.3 in | 7.62 mm | 10 VDC | 20 V | Half-Bridge | 200 mA | 0.35 A | Synchronous | 50 ns | 150 ns |
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 8-DIP 8-PDIP | Non-Inverting | -40 °C | 150 °C | Through Hole | N-Channel | 0.8 V | 2.9 V | 600 V | 0.3 in | 7.62 mm | 10 VDC | 20 V | Half-Bridge | 200 mA | 0.35 A | Synchronous | 50 ns | 150 ns |
INFINEON | |||||||||||||||||||||
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 8-SOIC | Non-Inverting | -40 °C | 150 °C | Surface Mount | N-Channel | 0.8 V | 2.9 V | 600 V | 0.154 in | 3.9 mm | 10 VDC | 20 V | Half-Bridge | 200 mA | 0.35 A | Synchronous | 50 ns | 150 ns |