
TST20H200CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 10A TO220AB
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TST20H200CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 10A TO220AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TST20H200CW |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220AB |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 930 mV |
TST20 Series
| Part | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Speed | Package / Case | Technology | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 200 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 930 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 300 V | 200 mA 500 ns | TO-220-3 | Schottky | 980 mV | 150 °C | -55 °C | Through Hole | 1 Pair Common Cathode | 10 A | ||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 120 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 900 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 200 µA | 100 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 790 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 120 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 930 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 100 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 150 °C | -55 °C | Through Hole | 840 mV | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 200 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 990 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 960 mV | 150 °C | -55 °C | Through Hole | |||||
Taiwan Semiconductor Corporation | TO-220AB | 500 µA | 60 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 540 mV | 150 °C | -55 °C | Through Hole |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 0.60 | |
Description
General part information
TST20 Series
Diode 200 V 10A Through Hole TO-220AB
Documents
Technical documentation and resources