DIODE SCHOTTKY 200V 10A TO220AB
| Part | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Speed | Package / Case | Technology | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 200 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 930 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 300 V | 200 mA 500 ns | TO-220-3 | Schottky | 980 mV | 150 °C | -55 °C | Through Hole | 1 Pair Common Cathode | 10 A | ||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 120 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 900 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 200 µA | 100 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 790 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 120 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 930 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 100 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 150 °C | -55 °C | Through Hole | 840 mV | |||
Taiwan Semiconductor Corporation | TO-220AB | 100 µA | 200 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 990 mV | 150 °C | -55 °C | Through Hole | |||
Taiwan Semiconductor Corporation | TO-220AB | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 960 mV | 150 °C | -55 °C | Through Hole | |||||
Taiwan Semiconductor Corporation | TO-220AB | 500 µA | 60 V | 10 A | 200 mA 500 ns | TO-220-3 | Schottky | 540 mV | 150 °C | -55 °C | Through Hole |